sot23 npn silicon planar high frequency transistor issue 3 - january 1996 features * high f t =900mhz min * max capacitance=1pf * low noise 4.5db partmarking detail - 179 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 20 v collector-emitter voltage v ceo 12 v emitter-base voltage v ebo 2.5 v continuous collector current i c 50 ma power dissipation p tot 330 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. max. unit conditions. collector-emitter sustaining voltage v ceo(sus) 12 v i c = 3ma, i b =0 collector-base breakdown voltage v (br)cbo 20 v i c = 1 m a, i e =0 emitter-base breakdown voltage v (br)ebo 2.5 v i e =10 m a, i c =0 collector cut-off current i cbo 0.02 1.0 m a m a v cb =15v, i e =0 v cb =15v, i e =0, t amb =150c static forward current transfer ratio h fe 25 250 i c =3ma, v ce =1v collector-emitter saturation voltage v ce(sat) 0.4 v i c =10ma, i b =1ma base-emitter saturation voltage v be(sat) 1.0 v i c =10ma, i b =1ma transition frequency f t 900 2000 mhz i c =5ma, v ce =6v, f=100mhz collector-base capacitance c cb 1pfi e =0, v cb =10v, f=1mhz small signal current gain h fe 25 300 i c =2ma, v ce =6v, f=1khz collector base time constant rb?c c 314psi e =2ma, v cb =6v, f=31.9mhz noise figure n f 4.5 db i c =1.5ma, v ce =6v r s =50 w , f=200mhz common-emitter amplifier power gain gpe 15 db i c =5ma, v ce =6v f=200mhz spice parameter data is available upon request for this device FMMT5179 FMMT5179 100 50 0 150 200 100 typical characteristics h fe v i c i c - (ma) h f e -g a in v b e - ( v olts) v ce =1v 0.1 1 10 0.4 0.2 0 0.8 1.0 0.6 500 0 1500 1000 30 0 0.1 1 10 c c b - (p f ) v cb - (volts) 1.2 c cb v v cb f t v i c v ce =6v f=100mhz 175c 100c 25c -55c 100 0.1 1 10 v ce =1v 175c 100c 25c -55c f t - ( m hz) i c - (ma) 100 0.1 1 10 i c - (ma) 1.0 0.8 0.6 0.4 0.2 v be(on) v i c i e =0 f=1mhz c b e sot23 3 - 170 3 - 169
sot23 npn silicon planar high frequency transistor issue 3 - january 1996 features * high f t =900mhz min * max capacitance=1pf * low noise 4.5db partmarking detail - 179 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 20 v collector-emitter voltage v ceo 12 v emitter-base voltage v ebo 2.5 v continuous collector current i c 50 ma power dissipation p tot 330 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. max. unit conditions. collector-emitter sustaining voltage v ceo(sus) 12 v i c = 3ma, i b =0 collector-base breakdown voltage v (br)cbo 20 v i c = 1 m a, i e =0 emitter-base breakdown voltage v (br)ebo 2.5 v i e =10 m a, i c =0 collector cut-off current i cbo 0.02 1.0 m a m a v cb =15v, i e =0 v cb =15v, i e =0, t amb =150c static forward current transfer ratio h fe 25 250 i c =3ma, v ce =1v collector-emitter saturation voltage v ce(sat) 0.4 v i c =10ma, i b =1ma base-emitter saturation voltage v be(sat) 1.0 v i c =10ma, i b =1ma transition frequency f t 900 2000 mhz i c =5ma, v ce =6v, f=100mhz collector-base capacitance c cb 1pfi e =0, v cb =10v, f=1mhz small signal current gain h fe 25 300 i c =2ma, v ce =6v, f=1khz collector base time constant rb?c c 314psi e =2ma, v cb =6v, f=31.9mhz noise figure n f 4.5 db i c =1.5ma, v ce =6v r s =50 w , f=200mhz common-emitter amplifier power gain gpe 15 db i c =5ma, v ce =6v f=200mhz spice parameter data is available upon request for this device FMMT5179 FMMT5179 100 50 0 150 200 100 typical characteristics h fe v i c i c - (ma) h f e -g a in v b e - ( v olts) v ce =1v 0.1 1 10 0.4 0.2 0 0.8 1.0 0.6 500 0 1500 1000 30 0 0.1 1 10 c c b - (p f ) v cb - (volts) 1.2 c cb v v cb f t v i c v ce =6v f=100mhz 175c 100c 25c -55c 100 0.1 1 10 v ce =1v 175c 100c 25c -55c f t - ( m hz) i c - (ma) 100 0.1 1 10 i c - (ma) 1.0 0.8 0.6 0.4 0.2 v be(on) v i c i e =0 f=1mhz c b e sot23 3 - 170 3 - 169
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